American leading memory maker Micron Technology yesterday held its Memory Day in Taiwan. It is the first time for the company to hold it in Taiwan. During the conference, the company announced that it has successfully produced 32Gb NAND flash wafer with high yield rate by using 34nm technology. Meanwhile, the company declared it will enter into the 32GB-128GB high capacity SSD market on a large scale. Dean Klein, vice president of DRAM system developing branch in Micron indicated that SSD will be the most promising part in NAND flash market.

The focus for yesterday’s Memory Day held in Taiwan is the overall arrangement of NAND flash market for the company. NAND flash marketing development section chief Kevin Kilbuck pointed out that 2008 will be the first year for NAND’s market scale to outweigh standard DRAM market scale and NAND has become a important part that memory makers can not neglect. Micron will invest 2 billion US dollars in the 2008 fiscal year (from Sept 2007-Aug 2008) in manufacturing 12-inch fab to expand NAND capacity. The company predicted that 32Gb NAND chips using 34nm technology will start volume production in Q408.

Dean Klein noted that the main reason for Micron to accelerate NAND technology R&D and to speed up its capacity expansion is that the company sees a bright future for SSD. Currently, NB, industrial PC, workstation and servers and so on terminals have already adopted low power consumption SSD as digital storage medium. The company estimated that global SSD market scale will reach USD 959 million this year and will extend to 4.4 billion US dollars in 2012, enabling SSD to be the most promising part in NAND market.