In DRAM spot market today, due to the buying momentum showed weak consistently in the past few days, the selling pressure had emerged gradually. Accordingly, the overall price also slid noticeably, especially in DDR2 eTT parts which declined about 4%. The market trading volume remained sluggish.  In mainstream brands, the quotation of DDR3 128*8 1333 declined slightly to USD2.73, for the price of DDR2 128M*8 800MHz, it dropped to USD2.47, and for DDR1 64M*8 400, the price stayed at USD1.60. Moreover, in DDR2 eTT parts, the average price of 64M*8 was around USD1.05, and for 128M*8, the quotations fell evidently to USD2.06.

In NAND Flash spot market today, the buyers still kept bidding for lower prices, but the suppliers were more cautious about quoting price and also reduce the volume of quotations. Thus, the negotiation of price between both sides showed narrow. The overall price continued to slide and there were only some transactions appeared on high density parts. For Samsung, prices of 1Gb / 2Gb / 4Gb(SLC) / 4Gb(MLC) / 8Gb(SLC) / 8Gb(MLC) / 16Gb(SLC) / 16Gb(MLC) / 32Gb(MLC)/ 64Gb(MLC) / 128Gb(MLC) were around USD2.25~2.55 / 2.85~3.05 / 3.95~4.55/ 3.8~3.85 / 7.6~9.05/3.85~4.0/ 14.0~14.5 / 4.58~5.2 / 8.15~9.05 / 18.2~19.4/ 40.0~40.5. For Hynix, prices of 1Gb / 2Gb / 4Gb(SLC) / 4Gb (MLC) / 8Gb(SLC) / 8Gb(MLC) / 16Gb(SLC) / 16Gb(MLC) / 32Gb(MLC) / 64Gb(MLC) were around USD2.55~2.6 / 2.6~3.0 / 4.0~4.5 / 3.75~3.8 / 6.4~6.6 / 4.5~4.6 / 12.0~12.4 / 4.45~4.65 / 6.4~8.1 / 17.4~17.5.