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【Market View】Consolidation in DRAM industry, TW players’ role to be vital; More high-density SSD in SATA interface to hit shelves
Published Mar.11 2008,13:54 PM (GMT+8)
Amid Nanya and Micron’s latest JV on 50nm and below DRAM technology, DRAM industry marks a new page for vertical and horizontal integration. Recalling the DRAM industry in 1998, rapid expansion of 8-inch wafer that led to price plummet of SDRAM, has eventually resulted in a wave of consolidation among industry players. A similar scenario arrives this year when DRAM makers are aggressively boosting their 12-inch wafer capacity on one hand, and weaker-than-expected Vista impact led DRAM price drops below variable cost on the other. Without a market consensus of expansion trim, DRAM makers are likely to enhance their profitability and cost structure in a fundamental manner via consolidation.
【Market View】Micron and Nanya signed MOU on sub 50nm DRAM technology development; Keep competition in UFD makers spurs vendors to introduce low-price high-density products to ease inventory
Published Mar.04 2008,13:43 PM (GMT+8)
DRAM technology, which used to be clearly classified into stack and trench structures, is about to see fundamental change amid leading advocators’ technology development and cross partnership.
【Market View】Rapid DRAM price drop shows weakening signs; Toshiba-SanDisk’s leap on next-generation NAND Flash to further boost memory density in consumer electronics
Published Feb.26 2008,15:44 PM (GMT+8)
DRAM spot prices keep heading south after seeing price of DDR2 512Mb eTT and DDR2 1Gb eTT dropped below US$1 and US$2 mark on February 13 and February 15. Price of the former dropped by 15.7% over the weak February 12-20 and closed at US$0.86, where price of the later dropped by 21.3% in the same period and closed at US$1.66.
【Market View】Short-term DRAM spot price drop accelerates, but overall stability not to be affected; Apple introduce new iPhone and iPod Touch with more memory
Published Feb.19 2008,17:21 PM (GMT+8)
DRAM transaction in the spot market was weak last week in terms of both pricing and trading volume, primarily due to weak demand. While for the contract market, DRAM supply-demand status suggests that quotes should stay flat in 2H Feb with less opportunity to see upward price trend in near term.
【Market View】Short term correction in spot, contract remains firmly up; 4Q07 revenue ranking of branded NAND Flash makers
Published Feb.13 2008,17:24 PM (GMT+8)
It was Chinese New Year Holidays last week and most Asian spot markets were closed. Taiwan spot market started trading again on Tuesday, where a higher trading volume began to appear in the afternoon, but was still considered relatively low. In the China spot market, players are still in their way back to work, thus the trading momentum was even lower. Last week (2/4-2/12), DDR2 512Mb eTT and DDR2 1Gb eTT dropped 0.97% and 1.4%, average spot price closed at US$ 1.02 and US$ 2.11 respectively. The difference between DDR2 1Gb chip price and DDR2 512Mb is converging.
【Market View】DRAM Spot Price Slightly Softened Caused by Pre-Chinese New Year Buying Backed Down; USB 3.0 Standard Kicks off in 2008; Earliest Impact to USB Flash Drive Market in 2009
Published Feb.05 2008,17:11 PM (GMT+8)
After the strong spot price rally in the first half of January, the Pre-Chinese New Year buying activities had come to an end, DDR2 512Mb eTT had surged up from 0.8 to a high of 1.22 USD. The spot price remained stable in previously (Jan. 22nd to Jan. 28th) and slightly dropped this week (Jan 29th to Feb. 4th) with DDR2 512Mb eTT and 1Gb eTT daily average spot price dropping 1.9% and 1.38% respectively, but still standing above 1 and 2.1 USD level. The market transaction momentum has slowed down already with less volume. Some explained the short term sluggishness was caused by the heavy snow storm in China, but actually it‘s caused by the end of Pre-Chinese New Year inventory preparation.
【Market View】DDR2 512Mb price to stabilize at US$1 level; Effect from iPod and iPhone on NAND Flash industry to maintain in 2008
Published Jan.29 2008,17:15 PM (GMT+8)
After experiencing a weeks’ noticeable appreciation, DRAM spot prices stabilized in the week Jan 21-25. DRAMeXchange observes that DRAM spot prices have posted consistent appreciation over the past month amid some DRAM makers’ announced fab maintenance plans and signs of price bottoming. While price negotiation with contract customers is still underway, some DRAM makers have expressed wishes to raise quotes in light of the recent spot price trend.
【Market View】DDR2 eTT chips posted noticeable appreciation; 2HJan contract price likely to see a mild growth; MacBook Air – thinnest SSD NB that holds your breath
Published Jan.22 2008,18:20 PM (GMT+8)
Spot prices of both 512Mb eTT and branded DDR2 chips dropped below the US$1 mark on Nov 7 and Nov 23, 2007. Prices hit bottom after trending downward for about a month’s time, with eTT parts closed at US$0.75 on Dec 11 and the branded parts hit US$0.92 on Dec 18.
【Market View】Price of 512Mb DDR2 stabilizing, hitting US$1 mark soon; What UMPC and MID bring to future NAND Flash market in the wireless broadband era
Published Jan.15 2008,16:11 PM (GMT+8)
Upward price trend was across the board in the DRAM spot market last week, with prices of both eTT and branded chips posting sequential gains. Price trend of DDR2 512Mb and 1Gb highlights the importance of migrating production to higher density, not only because of the mainstream role that 1Gb plays, but also the corresponding cost reduction. By witnessing a perfect W-shape price trend in the spot market and a stable contract price trend in 1HJan, DRAMeXchange also see stabilizing signs for 512 Mb component.
【Market View】Persistent NB shipments growth expected to help digesting some capacity; 2008 NAND Flash market outlook snapshot
Published Jan.08 2008,14:50 PM (GMT+8)
Although DRAM demand from Europe and the US market is temporarily put on hold after Christmas, the rare re-stock activities as observed in Asia once spurred eTT DDR2 spot price to exceed US$0.95 mark, where price of branded chips maintained stable.
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